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| TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES * Package type: leaded * Package form: side view lens * Dimensions (L x W x H in mm): 5 x 2.65 x 5 * High radiant sensitivity * Daylight blocking filter matched with 940 nm emitters * Fast response times 16733 * Angle of half sensitivity: = 37 * Package matched with IR emitter series TSKS5400S * Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with DESCRIPTION TEKT5400S is a silicon NPN phototransistor with high radiant sensitivity, molded in a plastic package with side view lens and daylight blocking filter. Filter bandwidth is matched with 950 nm IR emitters. APPLICATIONS * Detector in electronic control and drive circuits PRODUCT SUMMARY COMPONENT TEKT5400S Note Test condition see table "Basic Characteristics" Ica (mA) 4 (deg) 37 0.5 (nm) 850 to 980 ORDERING INFORMATION ORDERING CODE TEKT5400S Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 2000 pcs, 2000 pcs/bulk PACKAGE FORM Side view lens ABSOLUTE MAXIMUM RATINGS PARAMETER Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified t5s J-STD-051, soldered on PCB tp/T 0.5, tp 10 ms Tamb 40 C TEST CONDITION SYMBOL VCEO VECO IC ICM PV Tj Tamb Tstg Tsd RthJA VALUE 70 7 100 200 150 100 - 40 to + 85 - 40 to + 100 260 270 UNIT V V mA mA mW C C C C K/W Document Number: 81569 Rev. 1.5, 08-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 431 TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant 120 PV - Power Dissipation (mW) 100 80 60 RthJA = 270 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21331 Tamb - Ambient Temperature (C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Collector emitter voltage Emitter collector voltage Collector dark current Collector emitter capacitance Collector ligth current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage Turn-on time Turn-off time Cut-off frequency Note Tamb = 25 C, unless otherwise specified Ee = 1 mW/cm2, = 950 nm, IC = 0.1 mA VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100 TEST CONDITION IC = 1 mA IE = 100 A VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, = 950 nm, VCE = 5 V SYMBOL VCEO VECO ICEO CCEO Ica p 0.5 VCEsat ton toff fc 6 5 110 2 MIN. 70 7 1 6 4 37 920 850 to 980 0.3 100 TYP. MAX. UNIT V V nA pF mA deg nm nm V s s kHz BASIC CHARACTERISTICS Tamb = 25 C, unless otherwise specified 104 ICEO - Collector Dark Current (nA) 2.0 Ica rel - Relative Collector Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 100 VCE = 5 V Ee = 1 mW/cm2 = 950 nm 103 VCE = 10 V 102 101 10 20 94 8249 40 60 80 100 94 8239 Tamb - Ambient Temperature (C) Tamb - Ambient Temperature (C) Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature www.vishay.com 432 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81569 Rev. 1.5, 08-Sep-08 TEKT5400S Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors 10 Ica - Collector Light Current (mA) ton/toff - Turn-on/Turn-off Time (s) 12 10 8 6 ton TEKT5400S 1 VCE = 5 V RL = 100 = 950 nm 0.1 4 2 0 toff = 950 nm 0.01 0.01 0.1 Ee - Irradiance 1 (mW/cm 2) 10 V CE = 5 V 0 4 8 12 16 16707 94 8253 IC - Collector Current (mA) Fig. 4 - Collector Light Current vs. Irradiance Fig. 7 - Turn-on/Turn-off Time vs. Collector Current S ( ) rel - Relative Spectral Sensitivity 10 Ica - Collector Light Current (mA) 1.0 0.8 0.6 0.4 0.2 0 700 = 950 nm 1 E e =1mW/cm 2 0.5 mW/cm 2 0.2 mW/cm 2 0.1 mW/cm 2 0.1 0.1 1 10 100 94 8270 800 900 1000 1100 16718 V CE - Collector Ermitter Voltage (V) - Wavelength (nm) Fig. 5 - Collector Light Current vs. Collector Emitter Voltage Fig. 8 - Relative Spectral Sensitivity vs. Wavelength CCEO - Collector Ermitter Capacitance (pF) 20 16 f = 1 MHz I e rel - Relative Radiant Intensity 0 10 20 30 - Angular Displacement 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 12 8 4 0 0.1 1 10 100 VCE - Collector Ermitter Voltage (V) 94 8247 16732 Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage Fig. 9 - Relative Radiant Intensity vs. Angular Displacement Document Number: 81569 Rev. 1.5, 08-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 433 TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant PACKAGE DIMENSIONS in millimeters 16706 www.vishay.com 434 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81569 Rev. 1.5, 08-Sep-08 TEKT5400S Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors TAPE AND AMMOPACK STANDARDS Dimensions in millimeters Labeling: barcode-label see 5.6.4 16716 Measure limit over 20 index-holes: 1 Document Number: 81569 Rev. 1.5, 08-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 435 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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